Improved thermal stability of nitrogen annealed sputtered hafnium oxide thin films for VLSI technology

Microelectronics International

Volumn 27, Issue 2, 2010, Pages 93-97

  Nahar, R K ^a   Singh, Vikram ^a  

^a CENTRAL ELECTRONICS ENGINEERING RESEARCH INSTITUTE   (India)

Author keywords

Cooling; Films (states of matter); Heating; Nitrogen; Oxygen

Indexed keywords

ANNEALED FILMS; CHEMICAL METHOD; DESIGN/METHODOLOGY/APPROACH; DIELECTRIC THIN FILMS; EFFECT OF TEMPERATURE; ELECTRICAL PROPERTY; FILM DEPOSITION TECHNIQUES; FILMS (STATES OF MATTER); HAFNIUM OXIDE THIN FILMS; I-V AND C-V CHARACTERISTICS; INTEGRATED CIRCUIT TECHNOLOGY; INTERFACE CHARACTERISTIC; METAL OXIDE SEMICONDUCTOR; NITROGEN AMBIENT; ORGANIC THIN FILM TRANSISTORS; OXIDE TRAP DENSITY; OXIDE TRAPS; OXYGEN AMBIENT; RF-SPUTTERING; SI-BASED; TEMPERATURE RANGE; TEMPERATURE STABILITY; THERMAL ACTIVATION ENERGIES; THERMAL OXIDATION; THERMAL STABILITY; THERMAL-ANNEALING; VLSI TECHNOLOGY;

ACTIVATION ENERGY; ANNEALING; CAPACITANCE; CAPACITORS; HAFNIUM; HAFNIUM OXIDES; HEATING; INTEGRATED CIRCUITS; METALLIC COMPOUNDS; MOS DEVICES; NITROGEN; OXYGEN; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON OXIDES; THERMODYNAMIC STABILITY; THERMOGRAVIMETRIC ANALYSIS; THIN FILM TRANSISTORS; THIN FILMS;

OXIDE FILMS;

EID: 77952646689     PISSN: 13565362     EISSN: None     Source Type: Journal    
DOI: 10.1108/13565361011034777     Document Type: Article

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