Impact of diffusionless anneal using dynamic surface anneal on the electrical properties of a high-k/metal gate stack in metal-oxide-semiconductor devices

Applied Physics Letters

Volumn 98, Issue 12, 2011, Pages

  Choi, Changhwan ^a   Lee, Kam Leung ^b   Narayanan, Vijay ^b  

^a Hanyang University   (South Korea)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAP DEPOSITION; DYNAMIC SURFACE; ELECTRICAL PROPERTY; EQUIVALENT OXIDE THICKNESS; FLAT-BAND VOLTAGE; GATE STACKS; HIGH-K DIELECTRIC; HIGH-K GATE DIELECTRICS; METAL GATE; METAL OXIDE SEMICONDUCTOR; P-TYPE; POSITIVELY CHARGED; PROCESSING PARAMETERS; RAPID THERMAL ANNEAL; THERMAL BUDGET; THERMALLY INDUCED; TIN METAL GATE; VFB SHIFT;

DIELECTRIC DEVICES; DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; GATES (TRANSISTOR); METALS; OXYGEN; OXYGEN VACANCIES; RAPID THERMAL PROCESSING; SEMICONDUCTOR SWITCHES; TITANIUM NITRIDE;

GATE DIELECTRICS;

EID: 79953874779     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3570655     Document Type: Article

References (19)

1. K. Mistry, C. Allen, C. Auth, B. Beattie, B. Bergstrom, D. Bost, M. Brazier, M. Buehler, M. Cappellani, A. Chau, R. Choi, C. -H. Ding, G. Fischer, K. Ghani, T. Grover, R. Han, W. Hanken, D. Hattendorf, M. He, J. Hicks, J. Huessner, R. Ingerly, D. Jain, P. James, R. Jong, L. Joshi, S. Kenyon, C. Kuhn, K. Lee, K. Liu, H. Maiz, J. Mclntyre, B. Moon, P. Neirynck, J. Pae, S. Parker, C. Parsons, D. Prasad, C. Pipes, L. Prince, M. Ranade, P. Reynolds, T. Sandford, J. Shifren, L. Sebastian, J. Seiple, J. Simon, D. Sivakumar, S. Smith, P. Thomas, C. Troeger, T. Vandervoorn, P. Williams, and S. Zawadzki, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2007, 247.
2. Y. Akasaka, G. Nakamura, K. Shiraishi, N. Umezawa, K. Yamabe, O. Ogawa, M. Lee, T. Amiaka, T. Kasuya, H. Watanabe, T. Chikyow, F. Ootsuka, Y. Nara, and K. Nakamura, Jpn. J. Appl. Phys. 45, L1289 (2006). 10.1143/JJAP.45.L1289 (Pubitemid 47252525)
3. C. Choi, T. Ando, E. Cartier, M. M. Frank, R. Iijima, and V. Narayanan, Microelectron. Eng. 0167-9317 86, 1737 (2009). 10.1016/j.mee.2009.03.057
4. S. Guha and P. Solomon, Appl. Phys. Lett. 0003-6951 92, 012909 (2008). 10.1063/1.2828703
5. M. Jo, H. Park, M. Chang, H. -S. Jung, J. -H. Lee, and H. Hwang, Microelectron. Eng. 0167-9317 84, 1934 (2007). 10.1016/j.mee.2007.04.025 (Pubitemid 46776948)
6. E. Cartier, M. Hopstaken, and M. Copel, Appl. Phys. Lett. 0003-6951 95, 042901 (2009). 10.1063/1.3186075
7. E. Cartier, M. Steen, B. P. Linder, T. Ando, R. Iijima, M. Frank, J. S. Newbury, Y. H. Kim, F. R. McFeely, M. Copel, R. Haight, C. Choi, A. Callegari, V. K. Paruchuri, and V. Narayan, Sympposium on VLSI Technololgy, Kyoto, Japan, 15-18 June 2009 (The Japan Society of applied physics & IEEE Electron Device Society, Kyoto, 2009).
8. C. S. Park, S. C. Song, C. Burham, H. Niimi, B. S. Ju, J. Barnett, C. Y. Kang, P. Lysaght, G. Bersuker, R. Choi, H. K. Park, H. Hwang, B. H. Park, S. Kim, P. Kirsch, B. H. Lee, and R. Jammy, International Conference on Solid State Devices and Materials (SSDM), Ibaraki, Japan, 18 September 2007), p. 14.
9. K. Choi, H. N. Alshareef, H. C. Wen, H. Harris, H. Luan, Y. Senzaki, P. Lysaght, P. Majhi, and B. H. Lee, Appl. Phys. Lett. 0003-6951 89, 032113 (2006). 10.1063/1.2234288 (Pubitemid 44107063)
10. N. Umezawa, K. Shiraishi, S. Sungino, A. Tachibana, K. Ohmori, K. Kakushima, H. Iwai, T. Chikyow, T. Ohno, Y. Nara, and K. Yamada, Appl. Phys. Lett. 0003-6951 91, 132904 (2007). 10.1063/1.2789392 (Pubitemid 47502592)
11. S. Natarajan, M. Armstrong, M. Bost, R. Brain, M. Brazier. C. -H. Chang, V. Chikarmane, M. Childs, H. Deshpande, K. Dev, G. Ding, T. Ghani, O. Golonzka, W. Han, J. He, R. Heussner, R. James, I. Jin, C. Kenyon, S. Klopcic, S. -H. Lee, M. Liu, S. Lodha, B. McFadden, A. Murthy, L. Neiberg, J. Neirynck, P. Packan, S. Pae, C. Parker, C. Pelto, L. Pipes, J. Sebastian, J. Seiple, B. Sell, S. Sivakumar, B. Song, K. Tone, T. Troeger, C. Weber, M. Yang, A. Yeoh, and K. Zhang, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2008, 1.
12. K. Choi, T. Lee, S. Kwon, C. D. Young, H. R. Harris, H. C. Wen, M. Q. Lopeza, H. Park, N. Hiro, C. S. Park, R. Choi, S. C. Song, and B. H. Lee, IEEE Int. Reliab. Phys. Symp. Proc. 1082-7285 2007, 374. 10.1109/RELPHY.2007.369918
13. International Technology Roadmap for Semiconductor (ITRS), 2009, www.itrs.net.
14. J. Gelpey, S. McCoy, A. Kontos, L. Godet, C. Hatem, D. Camm, J. Chan, G. Papasouliotis, and J. Scheuer, International Workshop on Junction Technology (IWJT), Shanghai, China, 15-16 May 2008 (IEEE, Shanghai, China, 2008), p. 82..
15. W. Chism, M. Current, and V. Vartanian, J. Vac. Sci. Technol. B 1071-1023 28, C1C15, (2010). 10.1116/1.3253327
16. J. Borland, M. Tanjyo, N. Hamamoto, T. Nagayama, S. Muthukrishnan, J. Zelenko, I. Mirshad, W. Johnson, and T. Buyuklimanli, IEEE International Conference on Advanced Thermal Processing of Semiconductors (RTP), 2009, p. 1.
17. P. Kalra, P. Majhi, D. Heh, G. Bersuker, C. Young, N. Vora, R. Harris, P. Kirsch, R. Choi, M. Chang, J. Lee, H. Hwang, H. -H. Tseng, R. Jammy, and T. -J. K. Liu, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2007, 353.
18. H. Takahashi, H. Minakata, Y. Morisaki, S. Xiao, M. Nakabayashi, K. Nishigaya, T. Sakoda, K. Ikeda, H. Morioka, N. Tamura, M. Kase, and Y. Nara, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2009, 427.
19. C. Choi and J. C. Lee, J. Appl. Phys. 0021-8979 108, 064107 (2010). 10.1063/1.3481453