Effects of N 2 and NH 3 remote plasma nitridation on the structural and electrical characteristics of the HfO 2 gate dielectrics

Applied Surface Science

Volumn 257, Issue 4, 2010, Pages 1347-1350

  Park, K S ^a,b   Baek, K H ^a   Kim, D P ^a   Woo, J C ^a   Do, L M ^a   No, K S ^b  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Hafnium; High k dielectric; Plasma nitridation

Indexed keywords

ALUMINUM NITRIDE; AUGER ELECTRON SPECTROSCOPY; DIELECTRIC MATERIALS; HAFNIUM; HAFNIUM OXIDES; HIGH-K DIELECTRIC; NITRIDATION; SILICATES; X RAY PHOTOELECTRON SPECTROSCOPY;

C-V CHARACTERISTIC; ELECTRICAL CHARACTERISTIC; EQUIVALENT OXIDE THICKNESS; HFO2 GATE DIELECTRICS; INTERFACIAL LAYER; PLASMA NITRIDATION; POST DEPOSITION ANNEALING; REMOTE PLASMA NITRIDATION;

GATE DIELECTRICS;

EID: 77957142043     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.08.069     Document Type: Article

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