Electron detrapping characteristics in positive bias temperature stressed n -channel metal-oxide-semiconductor field-effect transistors with ultrathin HfSiON gate dielectrics

Applied Physics Letters

Volumn 91, Issue 3, 2007, Pages

  Zhu, Shiyang ^a   Nakajima, Anri ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRAPS; GATE DIELECTRICS; HAFNIUM COMPOUNDS; ULTRATHIN FILMS; VOLTAGE CONTROL;

DETRAPPING BEHAVIOR; ELECTRON DETRAPPING; LOGARITHMIC DEPENDENCE;

MOSFET DEVICES;

EID: 34547223998     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2754640     Document Type: Article

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