InGaN metal-semiconductor-metal photodetectors with triethylgallium precursor and unactivated Mg-doped GaN cap layers

Journal of Applied Physics

Volumn 110, Issue 8, 2011, Pages

  Lee, K H ^a   Chang, P C ^b   Chang, S J ^c   Wu, S L ^d  

^a NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

^b KUN SHAN UNIVERSITY   (Taiwan)

^c NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^d CHENG SHIU UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL MODELING; CAP LAYERS; CURRENT FLOWS; CURRENT TRANSPORT MECHANISM; CURRENT VOLTAGE; DEVICE PERFORMANCE; GAN CAP LAYERS; GAN FILM; HALL EFFECT MEASUREMENT; HIGH DENSITY; IN-SITU; METAL SEMICONDUCTOR METAL PHOTODETECTOR; MG-DOPED; OPTICAL AND ELECTRICAL PROPERTIES; PASSIVATION EFFECT; POTENTIAL BARRIERS; SECONDARY ION MASS SPECTROSCOPY; SPECTRAL RESPONSE MEASUREMENTS; TRAP ASSISTED TUNNELING; TRIETHYL GALLIUMS; TRIMETHYL GALLIUM;

ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; ELECTRIC PROPERTIES; EPITAXIAL FILMS; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALS; OPTOELECTRONIC DEVICES; PASSIVATION; PHOTODETECTORS; SECONDARY BATTERIES; SECONDARY ION MASS SPECTROMETRY; THERMIONIC EMISSION; X RAY DIFFRACTION;

GALLIUM NITRIDE;

EID: 80655139294     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3653834     Document Type: Article

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