In0.37Ga0.63N metal-semiconductor-metal photodetectors with recessed electrodes

IEEE Photonics Technology Letters

Volumn 17, Issue 4, 2005, Pages 875-877

  Yu, C L ^a   Chen, C H ^b   Chang, S J ^a   Su, Y K ^a   Chen, S C ^c   Chang, P C ^d   Chen, P C ^d   Wu, M H ^a   Chen, H C ^a   Su, K C ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHENG SHIU UNIVERSITY   (Taiwan)

^c NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^d NAN JEON INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

InGaN; Metal organic chemical vapor deposition; Metal semiconductor metal photodetectors (MSM PDs); Recessed electrodes

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTRODES; INDUCTIVELY COUPLED PLASMA; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; PHOTOCURRENTS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

METAL-SEMICONDUCTOR-METAL PHOTODETECTORS (MSM-PDS); RECESSED ELECTRODES;

PHOTODETECTORS;

EID: 20244371333     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2004.843251     Document Type: Article

References (26)

1. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Mukai, Y. Sugimoto, and H. Kiyoku, "Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes," Appl. Phys. Lett. vol. 69, pp. 4056-4058, 1996.
2. S. Nakamura and G. Fasol, The Blue Laser Diode, 1st ed. Berlin, Germany: Springer-Verlag, 1997.
3. S. D. Lester, M. J. Ludowise, K. P. Killeen, B. H. Perez, J. N. Miller, and S. J. Rosner, "High-efficiency InGaN MQW blue and green LEDs," J. Cryst. Growth, vol. 189, pp. 786-789, 1998.
4. 0.77N/ GaN MQW LED's with a low temperature GaN cap layer," Solid State Electron., vol. 47, pp. 2027-2030, 2003.
5. D.V. Kuksenkov, H. Temkin, A. Osinsky, R. Gaska, and M. A. Khan, "Low-frequency noise and performance of GaN p-n junction photodetectors," J. Appl. Phys., vol. 83, pp. 2142-2146, 1998.
6. G. Parish, S. Keller, P. Kozodoy, J. A. Ibbetson, H. Marchand, P. T. Fini, S. B. Fleischer, S. P. DenBaars, and U. K. Mishra, "High performance (Al, Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN," Appl. Phys. Lett., vol. 75, pp. 247-249, 1999.
7. E. Monroy, M. Hamilton, D. Walker, P. Kung, F. J. Sánchez, and M. Razeghi, "High quality visible-blind AlGaN p-i-n photodiodes," Appl. Phys. Lett., vol. 74, pp. 1171-1173, 1999.
8. A. Osinsky, S. Gangopadhyay, R. Gaska, B. Williams, M. A. Khan, D. Kuksenkov, and H. Temkin, "Low noise p-π-n GaN ultraviolet photodetectors," Appl. Phys. Lett., vol. 71, pp. 2334-2336, 1997.
9. 0.6 N-based Schottky barrier photodetectors," Appl. Phys. Lett., vol. 79, pp. 866-868, 2001.
10. C. H. Chen, S. J. Chang, Y. K. Su, G. C. Chi, J. Y. Chi, C. A. Chang, J. K. Sheu, and J. F. Chen, "GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts," IEEE Photon. Technol. Lett., vol. 13, no. 8, pp. 848-850, Aug. 2001.
11. Y. K. Su, S. J. Chang, C. H. Chen, J. F. Chen, G. C. Chi, J. K. Sheu, W. C. Lai, and J. M. Tsai, "GaN metal-semiconductor-metal ultraviolet sensors with various contact electrodes," IEEE Sensors J., vol. 2, no. 4, pp. 366-371, Aug. 2002.
12. D. Walker, E. Monroy, P. Kung, J. Wu, M. Hamilton, F. J. Sanchez, J. Diaz, and M. Razeghi, "High-speed, low-noise metal-semiconductor-metal ultraviolet photodetectors based on GaN," Appl. Phys. Lett., vol. 74, pp. 762-764, 1999.
13. 1-x N-based metal-semiconductor-metal ultraviolet photodetectors," Electron. Lett., vol. 18, pp. 1581-1583, 2000.
14. D. L. Rogers, "Integrated optical receivers using MSM detectors," J. Lightw. Technol., vol. 9, no. 12, pp. 1635-1638, Dec. 1991.
15. D. G. Parker and P. G. Say, "Indium tin oxide/GaAs photodiodes for millimetric-wave applications," Electron. Lett., vol. 22, pp. 1266-1267, 1988.
16. 1-xN (0 ≦ x ≧ 0.13)," J. Electron. Mater., vol. 31, no. 1. pp. L1-L6, 2002.
17. B. J. Van Zeghbroeck, W. Patrick, J. M. Halbout, and P. Vettiger, "105-GHz bandwidth metal-semiconductor-metal photodiode," IEEE Electron Device Lett., vol. 9, no. 10, pp. 527-529, Oct. 1988.
18. J. B. D. Soole and H. Schumacher, "Transit-time limited frequency response of InGaAs MSM photodetectors," IEEE Trans. Electron Devices vol. 37, no. 11, pp. 2285-2291, Nov. 1990.
19. 0.7 N/GaN short-period superlattice tunneling contact layer," IEEE Electron. Device Lett. vol. 22, no. 10, pp. 460-462, Oct. 2001.
20. W. C. Lai, S. J. Chang, M. Yokoyama, J. K. Sheu, and J. F. Chen, "InGaN-AlInGaN multiquantum-well LEDs," IEEE Photon. Technol. Lett. vol. 13, no. 6, pp. 559-561, Jun. 2001.
21. Y. K. Su, Y. Z. Chiou, F. S. Juang, S. J. Chang, and J. K. Sheu, "GaN and InGaN metal-semiconductor-metal photodetectors with different Schottky contact metals," Jpn. J. Appl. Phys., vol. 40, pp. 2996-2999, 2001.
22. J. D. Guo, M. S. Feng, R. J. Guo, F. M. Pan, and C. Y. Chang, "Study of Schottky barriers on n-type GaN grown by low-pressure metalorganic chemical vapor deposition," Appl. Phys. Lett., vol. 67, pp. 2657-2659, 1995.
23. K. M. Tracy, P. J. Hartlieb, S. Einfeldt, R. F. Davis, E. H. Hurt, and R. J. Nemanich, "Electrical and chemical characterization of the Schottky barrier formed between clean n-GaN (0001) surfaces and Pt, Au, and Ag," J. Appl. Phys., vol. 94, pp. 3939-3948, 2003.
24. 2/He gases," Mater. Sci. Eng. B, vol. 98, no. 1, pp. 60-64, 2003.
25. J. C. Carrano, T. Li, P. A. Grudowski, C. J. Eiting, R. D. Dupuis, and J. C. Campbell, "Comprehensive characterization of metal-semiconductor-metal ultraviolet photodetectors fabricated on single-crystal GaN," J. Appl. Phys., vol. 83, pp. 6148-6160, 1998.
26. 1-xN derived from theoretical simulation," Jpn. J. Appl. Phys., vol. 40, no. 5A, pp. 3157-3158, 2001.