InGaN p-i-n ultraviolet-A band-pass photodetectors

IEE Proceedings: Optoelectronics

Volumn 153, Issue 4, 2006, Pages 212-214

  Ko, T K ^a   Shei, S C ^b   Chang, S J ^a   Chiou, Y Z ^c   Lin, R M ^d   Chen, W S ^a   Shen, C F ^a   Chang, C S ^b   Lin, K W ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b Epitech Technology Corporation   (Taiwan)

^c SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^d CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; FLIP CHIP DEVICES; PHOTODETECTORS; ULTRAVIOLET RADIATION;

BAND-PASS PHOTODETECTORS; INCIDENT LIGHT WAVELENGTH; INDIUM-TIN-OXIDE (ITO); QUANTUM EFFICIENCIES;

GALLIUM NITRIDE;

EID: 33747123640     PISSN: 13502433     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-opt:20050083     Document Type: Article

References (13)

1. Pastila, R., and Leszczynski, D.: ' Ultraviolet A exposure might increase metastasis of mouse melanoma: a pilot study ', Photodermatol. Photoimmunol. Photomed., 2005, 21, p. 183-190
2. Kobayashi, M., Ueno, J., Enami, M., Katsuta, S., Ichiba, A., Ogura, K., Onomitsu, K., and Horikoshi, Y.: ' Growth and UV-A sensor applications of MgCdS/ZnCdS superlattices ', J. Crystal Growth, 2005, 278, p. 273-277
3. Nakamura, S., and Senoh, M.: ' Superbright green InGaN single-quantum-well-structure light-emitting diodes ', Jpn. J. Appl. Phys., 1995, 34, p. L1332-L1335 10.1143/JJAP.34.L1332 0021-4922
4. Chiou, Y.Z., Su, Y.K., Chang, S.J., Gong, J., Lin, Y.C., Liu, S.H., and Chang, C.S.: ' High detectivity InGaN-GaN multiquantum well p-n junction photodiodes ', IEEE J. Quantum Electron., 2003, 39, (5), p. 681-685 10.1109/JQE.2003.810262 0018-9197
5. 2 layers on AlGaN and AlGaN-GaN MOSHFET ', IEEE Trans. Electron Dev., 2003, 50, p. 1748-1752 10.1109/TED.2003.815147 0018-9383
6. Monroy, E., Muňoz, E., Sánchez, F.J., Calley, F., Calleja, E., Beaumont, B., Gibart, P., Muňoz, J.A., and Cussó, F.: ' High-performance GaN p-n junction photodetectors for solar ultraviolet applications ', Semicond. Sci. Technol., 1998, 13, (9), p. 1042-1046 10.1088/0268-1242/13/9/013 0268-1242
7. Xu, G.Y., Salvador, A., Kim, W., Fan, Z., Lu, C., Tang, H., Morkoç, H., Smith, G., Estes, M., Goldenberg, B., Yang, W., and Krishnankutty, S.: ' High speed, low noise ultraviolet photodetectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n) structures ', Appl. Phys. Lett., 1997, 71, (15), p. 2154-2156 0003-6951
8. Su, Y.K., Chang, S.J., Chen, C.H., Chen, J.F., Chi, G.C., Sheu, J.K., Lai, W.C., and Tsai, J.M.: ' GaN metal-semiconductor-metal ultraviolet sensors with various contact electrodes ', IEEE Sens. J., 2002, 2, (4), p. 366-371 10.1109/JSEN.2002.802240 1530-437X
9. 1-xN p-i-n photodiodes ', J. Crystal Growth, 2005, 276, (3-4), p. 367-373
10. Chang, S.J., Chen, C.H., Chang, P.C., Su, Y.K., Chen, P.C., Jhou, Y.D., Hung, H., Wang, C.M., and Huang, B.R.: ' Nitride-based LEDs with p-InGaN capping layer ', IEEE Trans. Electron. Dev., 2003, 50, p. 2567-2570 10.1109/TED.2003.820131 0018-9383
11. Chang, S.J., Lai, W.C., Su, Y.K., Chen, J.F., Liu, C.H., and Liaw, U.H.: ' InGaN/GaN multiquantum well blue and green light emitting diodes ', IEEE J. Sel. Top. Quantum Electron., 2002, 8, p. 278-283 10.1109/2944.999181 1077-260X
12. Chang, S.J., Kuo, C.H., Su, Y.K., Wu, L.W., Sheu, J.K., Wen, T.C., Lai, W.C., Chen, J.F., and Tsai, J.M.: ' 400nm InGaN/GaN and InGaN/AlGaN multiquantum well light-emitting diodes ', IEEE J. Sel. Top. Quantum Electron., 2002, 8, p. 744-748 10.1109/JSTQE.2002.801677 1077-260X
13. Chiou, Y.Z.: ' Nitride-based p-i-n bandpass photodetectors ', IEEE Electron. Dev. Lett., 2005, 3, p. 172-174