Ultraviolet-visible metal-semiconductor-metal photodetectors fabricated from inxGa1-xN (0 ≤ x ≤ 0.13)

Journal of Electronic Materials

Volumn 31, Issue 1, 2002, Pages

  Roberts, J C ^a   Parker, C A ^a   Muth, J F ^a   Leboeuf, S F ^a   Aumer, M E ^a   Bedair, S M ^a   Reed, M J ^a  

^a North Carolina State University   (United States)

Author keywords

InGaN; MSM; Nitride; Photodetector; Schottky contacts; UV

Indexed keywords

CURRENT DENSITY; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DEVICES; THIN FILMS;

DARK CURRENT; METAL-SEMICONDUCTOR-METAL (MSM); SCHOTTKY CONTACTS; SPECTRAL RESPONSE;

PHOTODETECTORS;

EID: 17644427273     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-002-0179-3     Document Type: Article

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