Characterisation of GaN-In x Ga1-x N quantum-well lasers

Applied Physics B: Lasers and Optics

Volumn 96, Issue 2-3, 2009, Pages 465-469

  Melouk, K ^a   Boughanmi, N ^a  

^a UNIVERSITÉ DES SCIENCES ET DE LA TECHNOLOGIE D ORAN MOHAMED BOUDIAF   (Algeria)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL MODEL; ANISOTROPIC EFFECTIVE MASS; CHARACTERISATION; EMISSION WAVELENGTH; EMPIRICAL FORMULAS; MATERIAL COMPOSITIONS; MATERIAL SYSTEMS; WELL WIDTH;

GALLIUM ALLOYS; GALLIUM NITRIDE; LASERS; OPTICAL GAIN; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS;

QUANTUM WELL LASERS;

EID: 67650888886     PISSN: 09462171     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00340-009-3443-x     Document Type: Article

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