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Applied Physics Letters

Volumn 93, Issue 13, 2008, Pages

High quality GaN-based Schottky barrier diodes

(5) Lee, K H a Chang, S J a Chang, P C b Wang, Y C a Kuo, C H c

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

b NAN JEON INSTITUTE OF TECHNOLOGY (Taiwan)

c NATIONAL CENTRAL UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ALLOYS; GALLIUM NITRIDE; SEMICONDUCTING GALLIUM;

HIGH-QUALITY; SCHOTTKY BARRIER;

SCHOTTKY BARRIER DIODES;

EID: 53449089745 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2993353 Document Type: Article

Times cited : (17)

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