Field dependent electrical conduction in HfO2/SiO2 gate stack for before and after constant voltage stressing

Journal of Applied Physics

Volumn 110, Issue 8, 2011, Pages

  Sahoo, S K ^a,b   Misra, D ^b  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION MECHANISM; CONSTANT VOLTAGE; CURRENT-VOLTAGE MEASUREMENTS; DEFECT FORMATION; DOMINANT MECHANISM; ELECTRICAL CONDUCTION; ELECTRICAL CONDUCTION MECHANISMS; ELEVATED TEMPERATURE; GATE STACKS; GATE-LEAKAGE CURRENT; HIGH TEMPERATURE; HIGH-FIELD REGIONS; LOW LEVEL; NMOS CAPACITORS; OHMIC CONDUCTION; POOLE-FRENKEL MECHANISMS; ROOM TEMPERATURE; STRESS-INDUCED; TEMPERATURE RANGE; THREE ORDERS OF MAGNITUDE; TRAP ENERGY LEVELS;

DEFECTS; ELECTRIC FIELDS; HAFNIUM OXIDES; LEAKAGE CURRENTS;

SILICON COMPOUNDS;

EID: 80655128582     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3651087     Document Type: Article

References (26)

1. E. P. Gusev, D. A. Buchanan, E. Cartier, A. Kuman, D. DiMaria, S. Guha, A. Callegari, S. Zafar, P. C. Jamison, D. A. Neumayer, M. Copel, M. A. Gribelyuk, C. D'Emic, P. Kozlowski, K. Chan, N. Bojarczuk, L.-A. Ragnarsson, P. Ronsheim, K. Rim, R. J. Fleming, A. Mocuta, and A. Ajmera, Tech. Dig.- Int. Electron Devices Meet. 451 (2001).
2. B. Tavel, X. Garros, T. Skotnicki, F. Martin, C. Leroux, D. Bensahel, M. N. Semeria, Y. Morand, J. F. Damlencourt, S. Descombs, F. Leverd, Y. Le-Friec, P. Leduc, M. Rivoire, S. Jullian, and R. Pantel, Tech. Dig.- Int. Electron Devices Meet. 263 (2002).
3. G. D. Wilk, M. L. Green, M.-Y. Ho, B. W. Busch, T. W. Sorsch, F. P. Klemens, B. Brijs, R. B. van Dover, A. Kornblit, T. Gustafsson, E. Garfunkel, S. Hillenius, D. Monroe, P. Kalavade, and J. M. Hergenrother, Tech. Dig. Symp. VLSI Technol. Dig. Tech. Pap. 88 (2002).
4. J. M. Hergenrother, G. D. Wilk, T. Nigam, F. P. Klemens, D. Monroe, P. J. Silverman, T. W. Sorsch, B. Busch, M. L. Green, P. Kalavade, W. M. Mansfield, S.-H. Oh, D. A. Muller, P. M. Voyles, J. L. Grazul, E. J. Shero, M. E. Givens, C. Pomarede, M. Mazanec, and C. Werkhoven, Tech. Dig.- Int. Electron Devices Meet. 51 (2001).
5. M.-Y. Ho, H. Gong, G. D. Wilk, B. W. Busch, M. L. Green, P. M. Voyles, D. A. Muller, M. Bude, W. H. Lin, A. See, M. E. Loomans, S. K. Lahiri, and P. I. Raisanen, J. Appl. Phys. 93, 1477 (2003). 10.1063/1.1534381
6. H. Kim, P. C. McIntyre, and K. C. Saraswat, Appl. Phys. Lett. 82, 106 (2003). 10.1063/1.1533117
7. H. K. Tyagi, B. Prasad, and P. J. George, Phys. Status Solidi C 6, 2750 (2009). 10.1002/pssc.200982579
8. S. K. Sahoo, D. C. Agrawal, Y. N. Mohapatra, S. B. Majumder, and R. S. Katiyar, Appl. Phys. Lett. 85, 5001 (2004). 10.1063/1.1825074
9. S. K. Sahoo, D. Misra, D. C. Agrawal, Y. N. Mohapatra, S. B. Majumder, and R. S. Katiyar, J. Appl. Phys. 108, 074112 (2010). 10.1063/1.3490187
10. S. K. Sahoo, D. Misra, M. Sahoo, C. A. MacDonald, H. Bakhru, D. C. Agrawal, Y. N. Mohapatra, S. B. Majumder, and R. S. Katiyar, J. Appl. Phys. 109, 064108 (2011). 10.1063/1.3563576
11. H. Kim, A. Marshall, P. C. Mclntyre, and K. C. Saraswat, Appl. Phys. Lett. 84, 2064 (2004). 10.1063/1.1667621
12. A. Campera, G. Iannaccone, and F. Crupi, IEEE Trans. Electron Devices 54, 83 (2007). 10.1109/TED.2006.887202
13. F.-C. Chiu, J. Appl. Phys. 100, 114102 (2006). 10.1063/1.2401657
14. I. Z. Mitrovic, Y. Lu, O. Buiu, and S. Hall, Microelectron. Eng. 84, 2306 (2007). 10.1016/j.mee.2007.04.087
15. N. A. Chowdhury, X. Wang, G. Bersuker, C. Young, N. Rahim, and D. Misra, Microelectron. Reliab. 49, 495 (2009). 10.1016/j.microrel.2009.02.003
16. N. Rahim and D. Misra, IEEE Trans. Device Mater. Reliab. 8, 689 (2008). 10.1109/TDMR.2008.2005675
17. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
18. Z. Xu, M. Houssa, S. De Gendt, and M. Heyns, Appl. Phys. Lett. 80, 1975 (2002). 10.1063/1.1435411
19. G. Bersuker, C. S. Park, J. Barnett, P. S. Lysaght, P. D. Kirsch, C. D. Young, R. Choi, and B. H. Lee, J. Appl. Phys. 100, 094108 (2006). 10.1063/1.2362905
20. O. Ghobar, D. Bauza, and B. Guillaumot, IEEE International Integrated Reliability Workshop (IIRW) Final Report, p. 94 (2007)
21. N. Ikarashi, K. Watanable, K. Masuzaki, and T. Nakagawa, Appl. Phys. Lett. 88, 101912 (2006). 10.1063/1.2182023
22. J. Gavartin, D. Munoz Ramo, A. Shluger, B. H. Lee, and G. Bersuker, Appl. Phys. Lett. 89, 082908 (2006). 10.1063/1.2236466
23. M. Houssa, High-k Gate Diectrics (IOP Publishing, Bristol and Philadelphia, 2004).
24. Y.-G. Wang, M.-Z. Xu, C.-H. Tan, J. F. Zhang, and X.-R. Duan, Chin. Phys. 14, 1886 (2005). 10.1088/1009-1963/14/9/036
25. L. Li, G. Meller, and H. Kosina, Solid State Electron. 51, 445 (2007). 10.1016/j.sse.2007.01.024
26. E. Cartier and A. Kerber, IEEE Int. Reliab. Phys. Symp. Proc. 47, 486 (2009). 10.1109/IRPS.2009.5173301