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Volumn 109, Issue 6, 2011, Pages

Improved dielectric properties and their temperature insensitivity in multilayered Ba0.8Sr0.2TiO3/ZrO2 thin films

(9) Sahoo, S K a,b Misra, D b Sahoo, M c MacDonald, C A c Bakhru, H c Agrawal, D C d Mohapatra, Y N d Majumder, S B e Katiyar, R S f

a NATIONAL RENEWABLE ENERGY LABORATORY (United States)

b NEW JERSEY INSTITUTE OF TECHNOLOGY (United States)

c STATE UNIVERSITY OF NEW YORK (United States)

d INDIAN INSTITUTE OF TECHNOLOGY KANPUR (India)

e INDIAN INSTITUTE OF TECHNOLOGY (India)

f UNIVERSITY OF PUERTO RICO (Puerto Rico)

Author keywords

[No Author keywords available]

Indexed keywords

BROAD TEMPERATURE RANGES; DIELECTRIC CONSTANTS; ELECTRICAL AND DIELECTRIC PROPERTIES; ENHANCED PERFORMANCE; MULTI-LAYER THIN FILM; MULTI-LAYERED; SI SUBSTRATES; SOL-GEL METHODS; TEMPERATURE DEPENDENCE; TEMPERATURE INSENSITIVITY; TEMPERATURE RANGE; TEMPERATURE STABLE; TIO; TUNABILITIES;

BARIUM; DIELECTRIC DEVICES; DIELECTRIC LOSSES; ELECTRIC PROPERTIES; FILM PREPARATION; MICROWAVE DEVICES; MULTILAYERS; SOL-GEL PROCESS; ZIRCONIUM ALLOYS;

MULTILAYER FILMS;

EID: 79953646378 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3563576 Document Type: Article

Times cited : (26)

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