The conduction mechanism of stress induced leakage current through ultra-thin gate oxide under constant voltage stresses

Chinese Physics

Volumn 14, Issue 9, 2005, Pages 1886-1891

  Wang, Yan Gang ^a   Xu, Ming Zhen ^a   Tan, Chang Hua ^a   Zhang, J F ^b   Duan, Xiao Rong ^a  

^a PEKING UNIVERSITY   (China)

^b LIVERPOOL JOHN MOORES UNIVERSITY   (United Kingdom)

Author keywords

Oxygen related donor like defects; Stress induced leakage current; Trap assisted tunnelling; Ultra thin gate oxide

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; ELECTRON ENERGY LEVELS;

OXYGEN-RELATED DONOR-LIKE DEFECTS; STRESS INDUCED LEAKAGE CURRENT; TRAP-ASSISTED TUNNELING; ULTRA-THIN GATE OXIDE;

LEAKAGE CURRENTS;

EID: 24344502222     PISSN: 10091963     EISSN: None     Source Type: Journal    
DOI: 10.1088/1009-1963/14/9/036     Document Type: Article

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