Current transport mechanisms in (HfO2)x(SiO2) 1-x/SiO2gate stacks

Microelectronic Engineering

Volumn 84, Issue 9-10, 2007, Pages 2306-2309

  Mitrovic, I Z ^a   Lu, Y ^a   Buiu, O ^a   Hall, S ^a  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

Arrhenius plots; Hafnium silicates; Poole Frenkel (PF) conduction; Trap level; trap assisted tunnelling (TAT)

Indexed keywords

ARRHENIUS PLOTS; CONDUCTION BANDS; ELECTRON TUNNELING; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR GROWTH; SILICA;

GATE INJECTION; HAFNIUM SILICATES; POOLE-FRENKEL (PF) CONDUCTION; TRAP ASSISTED TUNNELLING (TAT); TRAP LEVEL;

GATE DIELECTRICS;

EID: 34248675519     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.087     Document Type: Article

References (13)

1. Campera A., Iannaccone G., and Crupi F. IEEE TED 54 (2007) 83-99
2. F.-C. Chiu, J. Appl. Phys. 100 (2006) 114102-1 - 5.
3. Z. Xu, M. Houssa, S. De Gendt, M. Heyns, Appl. Phys. Lett. 80 (2002) 1975-7.
4. H. Kim, A. Marshall, P.C. McIntyre, K.C. Saraswat, Appl. Phys. Lett. 84 (2004) 2064-6.
5. Paskaleva A., Bauer A.J., Lemberger M., and Zurcher S. J. Appl. Phys. 95 (2004) 5583-5590
6. Lemberger M., Paskaleva A., Zurcher S., Bauer A.J., Frey L., and Ryssel H. Micr. Rel. 45 (2005) 819-822
7. D.S. Jeong, C.S. Hwang, J. Appl. Phys. 98 (2005) 113701-1 - 6.
8. I.Z. Mitrovic, O. Buiu, S. Hall, C. Bungey, T. Wagner, W. Davey, Y. Lu, Micr. Rel. (2007), in press.
9. D.S. Jeong, H.B. Park, C.S. Hwang, Appl. Phys. Lett. 86 (2005) 072903-1 - 3.
10. O. Buiu, C. Bungay, S. De Gendt, W.M. Davey, I.Z. Mitrovic, Y. Lu, J. Phys. (2007), in preparation.
11. V.V. Afanas'ev, A. Stesmans, L. Pantisano, T. Schram, Appl. Phys. Lett. 86 (2005) 232902-1 - 3.
12. Takeuchi H., and King T.-J. Appl. Phys. Lett. 83 (2003) 788-790
13. K. Xiong, Y. Du, K. Tse, J. Robertson, J. Appl. Phys. 101 (2007) 024101-1-7.