Temperature dependent time-to-breakdown (TBD) of TiN/HfO2 n-channel MOS devices in inversion

Microelectronics Reliability

Volumn 49, Issue 5, 2009, Pages 495-498

  Chowdhury, N A ^a   Wang, X ^b   Bersuker, G ^c   Young, C ^c   Rahim, N ^d   Misra, D ^d  

^a Submicron Development Center   (United States)

^b Villanova University   (United States)

^c SEMATECH   (United States)

^d NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; CONSTANT VOLTAGE STRESS; EFFECT OF TEMPERATURES; ELEVATED TEMPERATURES; GATE STACKS; GROWTH CONDITIONS; HIGH ELECTRIC FIELDS; INTERFACIAL LAYERS; LAYER THICKNESS; N CHANNELS; ON TIME; SUBSTRATE INJECTIONS; TEMPERATURE DEPENDENTS; THERMALLY ACTIVATED; THERMO-CHEMICAL MODELS;

ACTIVATION ENERGY; ARRHENIUS PLOTS; ELECTRIC FIELDS; SILICON COMPOUNDS; THERMAL EFFECTS;

MOS CAPACITORS;

EID: 65449137018     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2009.02.003     Document Type: Article

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