Chemical bonding states and band alignment of ultrathin aloxny/si gate stacks grown by metalorganic chemical vapor deposition

Applied Physics Express

Volumn 2, Issue 7, 2009, Pages

  He, Gang ^a   Toyoda, Satoshi ^a,b   Shimogaki, Yukihiro ^a   Oshima, Masaharu ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND ALIGNMENTS; CHEMICAL BONDING STATE; CONDUCTION BAND OFFSET; DEPTH DISTRIBUTION; GATE STACKS; METALORGANIC CHEMICAL VAPOR DEPOSITION; NO FORMATION; PHOTOELECTRON ENERGY; SILICATE LAYERS; SYNCHROTRON RADIATION PHOTOEMISSION SPECTROSCOPY; ULTRA-THIN; VALENCE BAND SPECTRA;

ALIGNMENT; ALUMINUM; BINDING ENERGY; CHEMICAL BONDS; EMISSION SPECTROSCOPY; ENERGY DISSIPATION; LOGIC GATES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICATES; SYNCHROTRON RADIATION; VAPORS;

PHOTOELECTRON SPECTROSCOPY;

EID: 68249087898     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.2.075503     Document Type: Article

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