Fabrication of lateral polysilicon gap of less than 50nm using conventional lithography

Journal of Nanomaterials

Volumn 2011, Issue , 2011, Pages

  Dhahi, Th S ^a   Hashim, U ^a   Ali, M E ^a   Ahmed, N M ^b   Nazwa, T ^a  

^a UNIVERSITY MALAYSIA PERLIS   (Malaysia)

^b SCHOOL OF PHYSICS   (Malaysia)

Author keywords

[No Author keywords available]

Indexed keywords

A-THERMAL; CONVENTIONAL LITHOGRAPHY; CONVENTIONAL PHOTOLITHOGRAPHY; COST-EFFECTIVE METHODS; DETECTION OF BIOMOLECULES; DIELECTRIC ANALYZERS; DIFFERENT SUBSTRATES; DOUBLE-LAYER CAPACITANCE; ELECTRICAL CHARACTERIZATION; GAP SIZE; GOLD ELECTRODES; LOW LEVEL; NANO-GAP; NANOGAPS; OXIDATION TIME; PATTERN SIZE; POTENTIAL APPLICATIONS; POWER SUPPLY; REDUCTION TECHNIQUES; SILICON SUBSTRATES;

ELECTRIC POWER SYSTEMS; ELECTROCHEMICAL ELECTRODES; GOLD COATINGS; NUCLEIC ACIDS; OXIDATION; PHOTOLITHOGRAPHY; POLYSILICON; SCANNING ELECTRON MICROSCOPY; SIZE DETERMINATION; SUBSTRATES;

FABRICATION;

EID: 80052664772     PISSN: 16874110     EISSN: 16874129     Source Type: Journal    
DOI: 10.1155/2011/250350     Document Type: Article

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