"Microstructured nanostructures" - Nanostructuring by means of conventional photolithography and layer-expansion technique

Sensors

Volumn 6, Issue 4, 2006, Pages 361-369

  Platen, Johannes ^a   Poghossian, Arshak ^a,b   Schöning, Michael J ^a,b  

^a AACHEN UNIVERSITY OF APPLIED SCIENCES   (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Layer expansion; Nanostructuring; Pattern size reduction; Self aligned patterning

Indexed keywords

METALS; PHOTOLITHOGRAPHY; SIZE DETERMINATION; THERMOOXIDATION;

CONVENTIONAL PHOTOLITHOGRAPHY; FLUIDIC CHANNELS; LAYER EXPANSION; NANO-STRUCTURING; NANOMETER DIMENSIONS; PATTERN SIZE; SELF-ALIGNED PATTERNING; THERMAL OXIDATION;

NANOSTRUCTURES;

EID: 33645675386     PISSN: 14243210     EISSN: 14248220     Source Type: Journal    
DOI: 10.3390/S6040361     Document Type: Conference Paper

References (27)

1. Namatsu, H.; Watanabe, Y.; Yamazaki, K.; Yamaguchi, T.; Nagase, M.; Ono, Y.; Fujiwara, A.; Horiguchi, S. Fabrication of Si single-electron transistors with precise dimensions by electron-beam nanolithography. J. Vac. Sci. Technol. B, 2003, 21, 1.
2. Sasajima, R.; Fujimaru, K.; Matsumura, H. A metal insulator tunnel transistor with 16 nm channel length. Appl. Phys. Lett., 1999, 74, 3215.
3. Fujimaru, K.; Sasajima, R.; Matsumura, H. Nanoscale metal transistor control of Fowler-Nordheim tunneling currents through 16 nm insulating channel. J. Appl. Phys., 1999, 85, 6912.
4. Chen, Y.; Pepin, A. Nanofabrication: Conventional and nonconventional methods. Electrophoresis, 2001, 22, 187.
5. Horstmann, J.T.; Goser, K.F. New fabrication technique for nano-MOS transistors with W=25 nm and L=25 nm using only conventional optical lithography. Microelectron. Eng., 2002, 61-62, 601.
6. Heidemeyer, H.; Single, C.; Zhou, F.; Prins, F.E.; Kern, D.P.; Plies, E.J. Self-limiting and pattern dependent oxidation of silicon dots fabricated on silicon-on-insulator material. Appl. Phys., 2000, 87, 4580.
7. Juhasz, R.; Linnros, J. Silicon nanofabrication by electron-beam lithography and laser-assisted electrochemical size-reduction. Microelectron. Eng., 2002, 61-62, 563.
8. Lee, C.-S.; Han, C.-H. A novel sub-micron gap fabrication technology using chemical-mechanical polishing (CMP): Application to lateral field emission device (FED). Sens. Actuators A, 2002, 97-98, 739.
9. Morpurgo, A.F.; Marcus, C.M.; Robinson, D.B. Controlled fabrication of metallic electrodes with atomic separation. Appl. Phys. Lett., 1999, 74, 2084.
10. Chung, K.-H.; Sung, S.-K.; Kim, D.H.; Choi, W.Y.; Lee, C.A.; Lee, J.D.; Park, B.-G. Nanoscale multi-line patterning using sidewall structure. Jpn. J. Appl. Phys., 2002, 41, 4410.
11. Choi, Y.-K.; Zhu, J.; Grunes, J.; Bokor, J.; Somorjai, G.A. Fabrication of sub-10-nm silicon nanowire arrays by size reduction lithography. J. Phys. Chem. B 2003, 107, 3340.
12. Georgiev, G.; Müller-Wiegand, M.; Georgieva, A.; Ludolph, K.; Oesterschulze, E. Lithography-free fabrication of sub-100 nm structures by self-aligned plasma etching of silicon dioxide layers and silicon. J. Vac. Sci. Technol. B, 2003, 21, 1361.
13. Meng, C.C.; Liao, G.R.; Lu, S.S. Formation of submicron T-gate by rapid thermally reflowed resist with metal transfer layer. Electron. Lett., 2001, 37, 1045.
14. Hashioka, S.; Matsumura, H. 10-nm-size fabrication of semiconductor substrates and metal thin lines by conventional photolithography. Jpn. J. Appl. Phys., 2000, 39, 7063.
15. Fujimaru, K.; Ono, T.; Nagai, R.; Matsumura, H. Nanometer pattern-mask fabricated by conventional photolithography. Jpn. J. Appl. Phys., 1997, 36, 7786.
16. Hashioka, S.; Mogi, T.; Matsumura, H. Novel nano-fabrication technique with low edge roughness. Jpn. J. Appl. Phys., 2003, 42, 4169.
17. Poghossian, A.; Schöning, M.J. German patent application, DE 1033275.8, 2003.
18. Poghossian, A.; Schöning, M.J.; Platen, J. Towards self-aligned nanostructures by means of layer expansion technique. Electrochim. Acta, 2005, 51, 838.
19. 5 films obtained by thermal oxidation of Ta on Si. Microelectron. Reliability, 1998, 38, 827.
20. Park, S.W.; Im, H.B. Effect of oxidation conditions on the properties of tantalum oxide-films on silicon substrates. Thin Solid Films, 1992, 207, 258.
21. Poghossian, A.; Schöning, M.J. Detecting both physical and (bio-)chemical parameters by means of ISFET devices. Electroanalysis, 2004, 16, 1863.
22. Christensen, C.; de Reus, R.; Bouwstra, S. Tantalum oxide thin films as protective coatings for sensors. J. Micromech. Microeng., 1999, 9, 113.
23. 5) thin films for advanced dielectric applications. Mater. Sci. Eng., 1998, R22, 269.
24. 5-gate EIS structure. Sens. Actuators B, 2005, 111-112, 423.
25. Poghossian, A.; Baade, A.; Emons, H.; Schöning, M.J. Application of ISFETs for pH measurement in rain droplets. Sens. Actuators B, 2001, 76, 634.
26. 5 sensing membrane for low drift and high sensitivity pH-ISFET. Sens. Actuators B, 1996, 34, 441.
27. 5-gate pH-sensitive field-effect transistor. Sens. Actuators B, 1996, 32, 115.