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Volumn 41, Issue 6 B, 2002, Pages 4410-4414

Nanoscale multi-line patterning using sidewall structure

Author keywords

Buffer layer; Dummy pattern; Etch selectivity; Hard mask; Sidewall patterning technique; Uniformity

Indexed keywords

DRY ETCHING; ELECTRON DEVICES; PHASE SHIFT; PHOTORESISTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY; SUBSTRATES;

EID: 0036614047     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.4410     Document Type: Article
Times cited : (16)

References (7)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.