|
Volumn 41, Issue 6 B, 2002, Pages 4410-4414
|
Nanoscale multi-line patterning using sidewall structure
a a a a a a a |
Author keywords
Buffer layer; Dummy pattern; Etch selectivity; Hard mask; Sidewall patterning technique; Uniformity
|
Indexed keywords
DRY ETCHING;
ELECTRON DEVICES;
PHASE SHIFT;
PHOTORESISTS;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
SCANNING ELECTRON MICROSCOPY;
SUBSTRATES;
MULTI-LINE PATTERNING;
NANOTECHNOLOGY;
|
EID: 0036614047
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.41.4410 Document Type: Article |
Times cited : (16)
|
References (7)
|