A silicon-on-insulator vertical nanogap device for electrical transport measurements in aqueous electrolyte solution

Nanotechnology

Volumn 18, Issue 29, 2007, Pages

  Strobel, Sebastian ^a   Arinaga, Kenji ^a,b   Hansen, Allan ^a,c   Tornow, Marc ^a,c  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b FUJITSU LABORATORIES LTD   (Japan)

^c TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; SILICA; SILICON ON INSULATOR TECHNOLOGY; SOLUTIONS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

ELECTROLYTE SOLUTION; NANOGAP;

ELECTROLYTES;

BUFFER; ELECTROLYTE; POLYMER; SILICON;

ANALYSIS; AQUEOUS SOLUTION; ARTICLE; BIOMOLECULAR ELECTRONICS; DEVICE; ELECTRIC CURRENT; ELECTRIC POTENTIAL; ELECTRODE; ELECTRON TRANSPORT; ENVIRONMENT; EVAPORATION; INSULATOR ELEMENT; NANOTECHNOLOGY; OXIDATION; PHYSICAL PARAMETERS; POTENTIOMETRY; PRIORITY JOURNAL; THICKNESS; TRANSMISSION ELECTRON MICROSCOPY; TRANSPORT KINETICS;

EID: 34347395340     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/18/29/295201     Document Type: Article

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