Formation of submicron T-gate by rapid thermally reflowed resist with metal transfer layer

Electronics Letters

Volumn 37, Issue 16, 2001, Pages 1045-1046

  Meng, C C ^a   Liao, G R ^b   Lu, S S ^b  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM ARSENIDE; PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS; SUBMICRON FLOWING GATE PROCESS; ULTRAVIOLET PHOTOLITHOGRAPHY; WET ETCHING;

ETCHING; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; PHOTORESISTS; RAPID THERMAL ANNEALING; SCATTERING PARAMETERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; TRANSCONDUCTANCE; ULTRAVIOLET RADIATION;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0035797484     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20010718     Document Type: Article

References (5)

1. Photo/EB hybrid exposure process for T-shaped gate superlow-noise HEMTs
2. Submicron T-shaped gate HEMT fabrication using deep-UV lithography
3. Electron-beam fabrication of GaAs low-noise MESFETs using a new trilayer resist technique
4. 0.2-μm fully-self-aligned Y-shaped gate HJFETs with reduced gate-fringing capacitance fabricated using collimated sputtering and electroless Au-plating
5. Modern GaAs processing methods