Fluorocarbon plasma etching of silicon: Factors controlling etch rate

Journal of Applied Physics

Volumn 96, Issue 1, 2004, Pages 65-70

  Humbird, David ^a   Graves, David B ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON IONS; ETCH RATE; ETCH RESISTANCE; MAXWELL-BOLTZMANN DISTRIBUTION;

ASPECT RATIO; BOUNDARY CONDITIONS; COMPUTER SIMULATION; CRYSTAL ORIENTATION; DIELECTRIC MATERIALS; EQUATIONS OF MOTION; FLUOROCARBONS; MOLECULAR DYNAMICS; PHOTORESISTS; PLASMA ETCHING; SPECIFICATIONS; VACUUM APPLICATIONS;

SILICON CARBIDE;

EID: 3142687599     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1736321     Document Type: Article

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