Investigation of ion transportation in high-aspect-ratio holes from fluorocarbon plasma for SiO2 etching

Thin Solid Films

Volumn 374, Issue 2, 2000, Pages 181-189

  Noda, Shuichi ^a   Ozawa, Nobuo ^b   Kinoshita, Takashi ^b   Tsuboi, Hideo ^c   Kawashima, Kenji ^a   Hikosaka, Yukinobu ^a   Kinoshita, Keizo ^a   Sekine, Makoto ^a  

^a ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

^b KOBE STEEL LTD   (Japan)

^c ULVAC INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; COMPUTATIONAL METHODS; DRY ETCHING; FLUOROCARBONS; HOLE TRAPS; INTERFACES (MATERIALS); IONS; MATHEMATICAL MODELS; PLASMA ETCHING; REACTION KINETICS; SILICA; SILICON WAFERS;

HIGH-ASPECT-RATIO HOLES; MICROCAPILLARY PLATES;

SEMICONDUCTING FILMS;

EID: 0034292079     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01150-0     Document Type: Article

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