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Physical Review B - Condensed Matter and Materials Physics

Volumn 67, Issue 20, 2003, Pages

Structural investigation of keV Ar-ion-induced surface ripples in Si by cross-sectional transmission electron microscopy

(4) Chini, T K a Okuyama, F b Tanemura, M b Nordlund, K c

a SAHA INSTITUTE OF NUCLEAR PHYSICS (India)

b NAGOYA INSTITUTE OF TECHNOLOGY (Japan)

c UNIVERSITY OF HELSINKI (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; SILICON;

ARTICLE; IRRADIATION; MEASUREMENT; MOLECULAR DYNAMICS; SPECTRAL SENSITIVITY; SURFACE PROPERTY; THICKNESS; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0037825916 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.67.205403 Document Type: Article

Times cited : (80)

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