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Volumn 518, Issue 13, 2010, Pages 3481-3486

Modeling of ion-bombardment damage on Si surfaces for in-line analysis

Author keywords

Ellipsometry; Ion bombardment; Plasma processing; Silicon; Surface defects

Indexed keywords

COMPOSITION ANALYSIS; ELLIPSOMETRIC ANALYSIS; GRADUAL TRANSITION; HIGH RESOLUTION; IN-LINE; IN-LINE MONITORING; INTERFACE LAYER; INTERFACE ROUGHNESS; MOLECULAR DYNAMICS SIMULATIONS; OPTICAL MODELS; PLASMA PROCESSING; PLASMA-INDUCED DAMAGE; SI SUBSTRATES; SI SURFACES; SILICON SURFACES;

EID: 77949463936     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.11.044     Document Type: Article
Times cited : (43)

References (44)
  • 9
    • 77949451440 scopus 로고    scopus 로고
    • The International Technology Roadmap for Semiconductors, SIA
    • The International Technology Roadmap for Semiconductors, SIA, 2008.
    • (2008)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.