SiO2 to Si selectivity mechanisms in high density fluorocarbon plasma etching

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 2, 1996, Pages 710-715

  Kirmse, K H R ^a,b   Wendt, A E ^a   Disch, S B ^a   Wu, J Z ^a   Abraham, I C ^a   Meyer, J A ^a,c   Breun, R A ^a   Woods, R Claude ^a  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

^b TEXAS INSTRUMENTS   (United States)

^c Tegal Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001344419     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588702     Document Type: Article

References (13)

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