Decoupling single nanowire mobilities limited by surface scattering and bulk impurity scattering

Journal of Applied Physics

Volumn 110, Issue 3, 2011, Pages

  Khanal, D R ^a,b   Levander, A X ^a,b   Yu, K M ^b   Liliental Weber, Z ^b   Walukiewicz, W ^b   Grandal, J ^c   Snchez Garca, M A ^c   Calleja, E ^c   Wu, J ^a,b  

^a University of California Berkeley   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

BANDBENDING; COULOMB SCATTERING; DONOR CONCENTRATIONS; EFFECTIVE CARRIER MOBILITY; EFFECTIVE FIELD; EFFECTIVE MOBILITIES; FREE CARRIERS; HIGH ENERGY; HIGH QUALITY; IMPURITY SCATTERING; INN NANOWIRES; INN THIN FILMS; INTERNAL ELECTRIC FIELDS; IONIZED DONORS; IONIZED DOPANTS; LARGE DIAMETER; MOBILITY ANALYSIS; PARTICLE IRRADIATION; SINGLE NANOWIRES; SURFACE ENGINEERING; SURFACE ROUGHNESS SCATTERING; SURFACE SCATTERING;

ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTRIC WIRE; FIELD EFFECT TRANSISTORS; HALL EFFECT; HALL MOBILITY; IONIZATION; NANOWIRES; SCATTERING; SEMICONDUCTOR DOPING; SURFACE ROUGHNESS;

CARRIER MOBILITY;

EID: 80051951957     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3611032     Document Type: Article

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