Hybrid complementary logic circuits of one-dimensional nanomaterials with adjustment of operation voltage

Advanced Materials

Volumn 21, Issue 21, 2009, Pages 2156-2160

  Jo, Gunho ^a   Hong, Woong Ki ^a   Sohn, Jung Inn ^b   Jo, Minseok ^a   Shin, Jiyong ^a,c   Weiland, Mark E ^b   Hwang, Hyunsang ^a   Ceckeler, Kurt E ^a   Lee, Takhee ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ARC-DISCHARGE PROCESS; CHARACTERISTIC FUNCTIONS; COMPLEMENTARY LOGIC CIRCUITS; DICHLOROBENZENE; DIELECTRIC LAYER; HIGH-PERFORMANCE LOGIC; HYBRID APPROACH; N-CHANNEL; NANO-DEVICES; NANOWIRE TRANSISTORS; ONE-DIMENSIONAL NANOMATERIALS; OPERATING VOLTAGE; OPERATION VOLTAGE; PROTON RADIATIONS; SEMICONDUCTOR PARAMETER ANALYZERS; SWNT SUSPENSIONS; ZNO;

CARBON NANOTUBES; CENTRIFUGATION; CENTRIFUGES; NANOSTRUCTURED MATERIALS; PROTONS; SINGLE-WALLED CARBON NANOTUBES (SWCN); SWITCHING CIRCUITS; TRANSISTORS; ZINC; ZINC OXIDE;

LOGIC CIRCUITS;

EID: 67649307121     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/adma.200803510     Document Type: Article

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