Dopant profiling and surface analysis of silicon nanowires using capacitance-voltage measurements

Nature Nanotechnology

Volumn 4, Issue 5, 2009, Pages 311-314

  Garnett, Erik C ^a   Tseng, Yu Chih ^a   Khanal, Devesh R ^b,c   Wu, Junqiao ^b,c   Bokor, Jeffrey ^a   Yang, Peidong ^a,b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c Lawrence Berkeley National Laboratory   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES; FIELD EFFECT TRANSISTORS; INTERFACE STATES; NANOWIRES; SILICON; SURFACE ANALYSIS; SURFACE PROPERTIES; THRESHOLD VOLTAGE;

CAPACITANCE VOLTAGE MEASUREMENTS; CAPACITANCE-VOLTAGE TECHNIQUES; DOPANT CONCENTRATIONS; DOPANT DISTRIBUTION; ELECTRONIC PROPERTIES OF NANOWIRES; HIGH PERFORMANCE DEVICES; SILICON NANOWIRE FIELD-EFFECT TRANSISTORS; THERMOELECTRIC SYSTEMS;

CAPACITANCE;

NANOCOATING; NANOWIRE; SILICON; NANOMATERIAL;

ARTICLE; ELECTRIC CAPACITANCE; ELECTRIC POTENTIAL; MEASUREMENT; PRIORITY JOURNAL; SEMICONDUCTOR; SIMULATION; SURFACE PROPERTY; CHEMICAL MODEL; CHEMISTRY; COMPUTER SIMULATION; CONFORMATION; CRYSTALLIZATION; ELECTROCHEMISTRY; ELECTROMAGNETIC FIELD; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; ULTRASTRUCTURE;

COMPUTER SIMULATION; CRYSTALLIZATION; ELECTRIC CAPACITANCE; ELECTROCHEMISTRY; ELECTROMAGNETIC FIELDS; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MODELS, CHEMICAL; MOLECULAR CONFORMATION; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; SILICON; SURFACE PROPERTIES;

EID: 67049158294     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2009.43     Document Type: Article

References (28)

1. Cui, Y., Wei, Q. Q., Park, H. K. & Lieber, C. M. Nanowire nanosensors for highly sensitive and selective detection of biological and chemical species. Science 293, 1289-1292 (2001).
2. Feng, X. L., He, R. R., Yang, P. D. & Roukes, M. L. Very high frequency silicon nanowire electromechanical resonators. Nano Lett. 7, 1953-1959 (2007).
3. Kayes, B. M., Atwater, H. A. & Lewis, N. S. Comparison of the device physics principles of planar and radial p-n junction nanorod solar cells. J. Appl. Phys. 97, 114302 (2005).
4. Garnett, E. C. & Yang, P. D. Silicon nanowire p-n junction solar cells. J. Am. Chem. Soc. 130, 9224-9225 (2008).
5. Hochbaum, A. I. et al. Enhanced thermoelectric performance of rough silicon nanowires. Nature 451, 163-168 (2008).
6. Law, M., Goldberger, J. & Yang, P. D. Semiconductor nanowires and nanotubes. Ann. Rev. Mater. Res. 34, 83-122 (2004).
7. Goldberger, J., Hochbaum, A. I., Fan, R. & Yang, P. D. Silicon vertically integrated nanowire field effect transistors. Nano Lett. 6, 973-977 (2006).
8. Cui, Y., Duan, X. F., Hu, J. T. & Lieber, C. M. Doping and electrical transport in silicon nanowires. J. Phys. Chem. B 104, 5213-5216 (2000).
9. Nicollian, E. H. & Brews, J. R. in MOS Physics and Technology 1-903 (Wiley-Interscience, 1982).
10. Tu, R., Zhang, L., Nishi, Y. & Dai, H. J. Measuring the capacitance of individual semiconductor nanowires for carrier mobility assessment. Nano Lett. 7, 1561-1565 (2007).
11. Gunawan, O. et al. Measurement of carrier mobility in silicon nanowires. Nano Lett. 8, 1566-1571 (2008).
12. Khanal, D. R. & Wu, J. Gate coupling and charge distribution in nanowire field effect transistors. Nano Lett. 7, 2778-2783 (2007).
13. Roddaro, S. et al. InAs nanowire metal-oxide semiconductor capacitors. Appl Phys. Lett. 92, 253509-253511 (2008).
14. Haick, H., Hurley, P. T., Hochbaum, A. I., Yang, P. D. & Lewis, N. S. Electrical characteristics and chemical stability of non-oxidized, methyl-terminated silicon nanowires. J. Am. Chem. Soc. 128, 8990-8991 (2006).
15. 2 interface on the charge carrier density of Si nanowires. Appl. Phys. A-Mater. Sci. Proc. 86, 187-191 (2007).
16. He, R. R. et al. Si nanowire bridges in microtrenches: Integration of growth into device fabrication. Adv. Mater. 17, 2098-2102 (2005).
17. He, R. & Yang, P. Giant piezoresistance effect in silicon nanowires. Nature Nanotech. 1, 42-46 (2006).
18. Zhang, R. Q. et al. Structures and energetics of hydrogen-terminated silicon nanowire surfaces. J. Chem. Phys. 123, 144703 (2005).
19. Wagner, R. S. & Ellis, W. C. Vapor-liquid-solid mechanism of single crystal growth. Appl. Phys. Lett. 4, 89-90 (1964).
20. Ilani, S., Donev, L. A. K., Kindermann, M. & McEuen, P. L. Measurement ofthe quantum capacitance of interacting electrons in carbon nanotubes. Nature Phys. 2, 687-691 (2006).
21. Wilk, G. D., Wallace, R. M. & Anthony, J. M. High-kappa gate dielectrics: Current status and materials properties considerations. J. Appl. Phys. 89, 5243-5275 (2001).
22. 2. Microelectron. Reliability 45, 823-826 (2005).
23. 3 dielectric thin films on silicon. J. Appl. Phys. 99, 054902 (2006).
24. Garnett, E. C., Liang, W. J. & Yang, P. D. Growth and electrical characteristics of platinum-nanoparticle-catalyzed silicon nanowires. Adv. Mater. 19, 2946-2950 (2007).
25. Wu, Y. et al. Controlled growth and structures of molecular-scale silicon nanowires. Nano Lett. 4, 433-436 (2004).
26. Terman, L. M. An investigation of surface states at a silicon silicon oxide interface employing metal oxide silicon diodes. Solid-State Electron. 5, 285-299 (1962).
27. Kennedy, D. P., Murley, P. C. & Kleinfel, W. On measurement ofimpurityatom distributions in silicon by differential capacitance technique. IBM J. Res. Dev. 12, 399-400 (1968).
28. Kennedy, D. P. & Obrien, R. R. On measurement of impurity atom distributions by differential capacitance technique. IBM J. Res. Dev. 13, 212-213 (1969).