N-type doping of InGaN by high energy particle irradiation

Physica Status Solidi (A) Applications and Materials Science

Volumn 206, Issue 6, 2009, Pages 1168-1175

  Yu, K M ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BURSTEIN-MOSS SHIFT; CHARGED DEFECTS; CONDUCTION BAND EDGE; DEFECT MODEL; DONOR AND ACCEPTOR; ELECTRICAL AND OPTICAL PROPERTIES; ELECTRON CONCENTRATION; FERMI ENERGY; FORMATION ENERGIES; HIGH-ENERGY PARTICLE IRRADIATION; HIGH-ENERGY PARTICLES; INGAN ALLOY; IRRADIATED FILMS; IRRADIATION DOSE; N-TYPE DOPING; N-TYPE MATERIALS; NATIVE DEFECT; OPTICAL ABSORPTION EDGE; PARTICLE IRRADIATION; SIMPLE METHOD; STABILIZATION ENERGY;

ELECTRIC PROPERTIES; ELECTRON MOBILITY; ELECTRONIC PROPERTIES; FERMIONS; GALLIUM; IRRADIATION; OPTICAL PROPERTIES; POINT DEFECTS; STABILIZATION;

DEFECTS;

EID: 67650318128     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200880972     Document Type: Article

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