Obtaining uniform dopant distributions in VLS-grown Si nanowires

Nano Letters

Volumn 11, Issue 1, 2011, Pages 183-187

  Koren, E ^a   Hyun, J K ^a   Givan, U ^b   Hemesath, E R ^a   Lauhon, L J ^a   Rosenwaks, Y ^a  

^a TEL AVIV UNIVERSITY   (Israel)

^b Northwestern University   (United States)

Author keywords

Diffusion; Doping; Kelvin probe force microscopy; Nanowire; VLS

Indexed keywords

ACTIVE DOPANT DISTRIBUTION; ACTIVE SURFACES; AMERICAN CHEMICAL SOCIETY; DOPANT DISTRIBUTION; DOPING; DOPING CONCENTRATION; GROWTH AXIS; GROWTH CONDITIONS; KELVIN PROBE FORCE MICROSCOPY; NANOWIRE SURFACE; NON-UNIFORM DOPING; ORDERS OF MAGNITUDE; PHOSPHORUS-DOPED; SEMICONDUCTING NANOWIRES; SI NANOWIRE; SURFACE DOPING; THERMAL-ANNEALING; UNIFORM DOPING PROFILE; VAPOR-LIQUID-SOLID METHODS; VAPOR-LIQUID-SOLID PROCESS; VLS;

DIFFUSION; LIQUIDS; NANOWIRES; PHOSPHORUS; PROBES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; VAPORS;

DOPING (ADDITIVES);

EID: 79951534719     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl103363c     Document Type: Article

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