Tuning of the electronic characteristics of ZnO nanowire field effect transistors by proton irradiation

ACS Nano

Volumn 4, Issue 2, 2010, Pages 811-818

  Hong, Woong Ki ^a   Jo, Gunho ^a   Sohn, Jung Inn ^b   Park, Woojin ^a   Choe, Minhyeok ^a   Wang, Gunuk ^a   Kahng, Yung Ho ^a   Welland, Mark E ^b   Lee, Takhee ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Electronic transport; Field effect transistors; Proton irradiation; Semiconductor nanowires; ZnO nanowires

Indexed keywords

BANDBENDING; DEVICE STRUCTURES; ELECTRIC FIELD MODULATION; ELECTRICAL CHARACTERISTIC; ELECTRICAL CONDUCTANCE; ELECTRONIC CHARACTERISTICS; ELECTRONIC TRANSPORT; EXPERIMENTAL OBSERVATION; FUNCTIONALIZATIONS; HIGH ENERGY PROTON; INDUCED CHARGES; NANOSCALE DEVICE; NEGATIVE GATE; POSITIVE GATE BIAS; SEMICONDUCTOR NANOWIRE; ZNO NANOWIRES;

ELECTRIC CONDUCTANCE; ELECTRIC FIELDS; ELECTRIC NETWORK ANALYSIS; ELECTRIC WIRE; FIELD EFFECT TRANSISTORS; MESFET DEVICES; NANOSTRUCTURED MATERIALS; NANOWIRES; PROTONS; RADIATION; SILICON COMPOUNDS; THRESHOLD VOLTAGE; TUNING; ZINC OXIDE;

PROTON IRRADIATION;

EID: 77649090577     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn9014246     Document Type: Conference Paper

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