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Volumn 331, Issue 1, 2011, Pages 49-55

Extended defect structure of a-plane GaN produced by sidewall lateral epitaxial overgrowth

(4) Hu, Yan Ling a Kraemer, Stefan a Fini, Paul T b Speck, James S a

a University of California (United States)

b Inlustra Technologies LLC (United States)

Author keywords

A1. Extended defect; A1. Inversion domain; A1. Stacking fault; A3. Hydride vapor phase epitaxy; B1. Gallium nitride; B1. GaN

Indexed keywords

A1. STACKING FAULT; A3. HYDRIDE VAPOR PHASE EPITAXY; B1. GALLIUM NITRIDE; B1. GAN; EXTENDED DEFECT; INVERSION DOMAINS;

DEFECTS; EPITAXIAL FILMS; HYDRIDES; MICROSTRUCTURE; SEMICONDUCTING GALLIUM COMPOUNDS; STACKING FAULTS; THICK FILMS; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY; VAPORS;

GALLIUM NITRIDE;

EID: 80051862076 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2011.03.063 Document Type: Article

Times cited : (12)

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