High-resolution TEM observation of AlN grown on on-axis and off-cut SiC substrates

Materials Science in Semiconductor Processing

Volumn 9, Issue 1-3, 2006, Pages 180-183

  Bai, J ^a   Huang, X ^a   Dudley, M ^a  

^a Stony Brook University   (United States)

Author keywords

AlN; Defect; HRTEM

Indexed keywords

DEFECTS; OPTICAL RESOLVING POWER; SILICON CARBIDE; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

ALN; HRTEM; MISFIT DISLOCATIONS (MD); PRISMATIC STACKING FAULTS (PSF);

ALUMINUM COMPOUNDS;

EID: 33744529554     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.01.055     Document Type: Article

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