Transmission electron microscopy study of a defected zone in GaN on a SiC substrate grown by hydride vapor phase epitaxy

Journal of Applied Physics

Volumn 94, Issue 3, 2003, Pages 1676-1685

  Bendersky, Leonid A ^a   Tsvetkov, Denis V ^b   Melnik, Yuriy V ^b  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b Technologies and Devices International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COALESCENCE; DISLOCATIONS (CRYSTALS); NUCLEATION; SILICON CARBIDE; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY;

THREADING DISLOCATIONS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0042433379     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1589169     Document Type: Article

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