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Diamond and Related Materials

Volumn 20, Issue 8, 2011, Pages 1188-1192

Epitaxial growth of InN film on intermediate oxide buffer layer by RF-MOMBE

(7) Kuo, Shou Yi a Lai, Fang I b Chen, Wei Chun c Lin, Woei Tyng b Hsiao, Chien Nan c Lin, Hsin I a Pan, Han Chang d

a CHANG GUNG UNIVERSITY (Taiwan)

b YUAN ZE UNIVERSITY (Taiwan)

c NATIONAL APPLIED RESEARCH LABORATORIES (Taiwan)

d Gintech Energy Corporation (Taiwan)

Author keywords

A1. Buffer layer; B1. InN; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

A1. BUFFER LAYER; B1. INN; B1. NITRIDES; B2. SEMICONDUCTING III-V MATERIALS; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; FITTING RESULTS; INDIUM NITRIDE; INN FILMS; LATTICE-MISMATCHED; LINE SHAPE; METAL-ORGANIC MOLECULAR BEAM EPITAXY; NEAR-INFRARED EMISSIONS; OXIDE BUFFER LAYERS; OXIDE THIN FILMS; PL MEASUREMENTS; PL SPECTRA; RF-SPUTTERING; SAPPHIRE WAFER; SURFACE ELECTRON ACCUMULATION; TEMPERATURE DEPENDENCE; WURTZITES;

BUFFER LAYERS; EPITAXIAL FILMS; FIELD EMISSION MICROSCOPES; FILM GROWTH; INDIUM; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NITRIDES; OPTICAL PROPERTIES; OXIDE FILMS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC SULFIDE;

EPITAXIAL GROWTH;

EID: 80051799961 PISSN: 09259635 EISSN: None Source Type: Journal
DOI: 10.1016/j.diamond.2011.06.006 Document Type: Article

Times cited : (11)

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