Laser-assisted metalorganic vapor-phase epitaxy (LMOVPE) of indium nitride (InN)

Physica Status Solidi (A) Applied Research

Volumn 194, Issue 2 SPEC., 2002, Pages 502-505

  Bhuiyan, A G ^a   Tanaka, T ^a   Yamamoto, A ^a   Hashimoto, A ^a,b  

^a UNIVERSITY OF FUKUI   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; FILM GROWTH; LASER APPLICATIONS; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; OPTIMIZATION; SAPPHIRE; SINGLE CRYSTALS; THERMAL EFFECTS;

INDIUM NITRIDE; THERMAL GROWTH; TRIETHYLINDIUM; TRIMETHYLINDIUM;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0036965081     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200212)194:2<502::AID-PSSA502>3.0.CO;2-2     Document Type: Article

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