Interfacial structure of GaN and InN thin films grown on ZnO substrates

Key Engineering Materials

Volumn 301, Issue , 2006, Pages 79-82

  Ohgaki, Takeshi ^a   Sugimura, Shigeaki ^b   Ryoken, Haruki ^a,c   Ohashi, Naoki ^a   Sakaguchi, Isao ^a   Sekiguchi, Takashi ^a   Haneda, Hajime ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b Tokyo Denpa Co Ltd   (Japan)

^c KYUSHU UNIVERSITY   (Japan)

Author keywords

Gallium nitride; Indium nitride; MBE and interfacial structure; Substrate; Thin film; Zinc oxide

Indexed keywords

CRYSTAL LATTICES; GALLIUM NITRIDE; INDIUM COMPOUNDS; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; SUBSTRATES; SURFACE STRUCTURE; ZINC OXIDE;

INDIUM NITRIDE; MBE AND INTERFACIAL STRUCTURE;

THIN FILMS;

EID: 33644888817     PISSN: 10139826     EISSN: 16629795     Source Type: Book Series    
DOI: 10.4028/0-87849-982-2.79     Document Type: Conference Paper

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