Structure and properties of GaN films grown on single crystalline ZnO substrates by molecular beam epitaxy

Journal of Crystal Growth

Volumn 275, Issue 1-2, 2005, Pages

  Ohgaki, Takeshi ^a   Sugimura, Shigeaki ^a,b   Ohashi, Naoki ^a   Sakaguchi, Isao ^a   Sekiguchi, Takashi ^a   Haneda, Hajime ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b Tokyo Denpa Co Ltd   (Japan)

Author keywords

A1. Substrates; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

CRYSTAL STRUCTURE; CRYSTALLINE MATERIALS; FILM GROWTH; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; NITRIDES; SINGLE CRYSTALS; SUBSTRATES; ZINC OXIDE;

BUFFER LAYERS; LATTICE ORIENTATION; SEMICONDUCTING III-V MATERIALS; WURTZITE;

THIN FILMS;

EID: 15944403147     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.11.196     Document Type: Conference Paper

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