Impact of GaN buffer layer on the growth and properties of InN islands

Applied Physics Letters

Volumn 92, Issue 22, 2008, Pages

  Laboutin, O A ^a   Welser, R E ^a  

^a KOPIN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; BUFFER LAYERS; CHEMICAL PROPERTIES; DIFFRACTION; EPITAXIAL LAYERS; GALLIUM ALLOYS; GALLIUM NITRIDE; IMAGING TECHNIQUES; ION BEAM ASSISTED DEPOSITION; LANDFORMS; METALLIZING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROSCOPIC EXAMINATION; OPTICAL WAVEGUIDES; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; PRESSURE; SCANNING PROBE MICROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON COMPOUNDS; VAPOR DEPOSITION; X RAY ANALYSIS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; X RAYS;

(PL) PROPERTIES; AMERICAN INSTITUTE OF PHYSICS (AIP); ATOMIC FORCE (AF); GAN BUFFER LAYERS; GAN GROWTH; ISLAND DENSITIES; LOW PRESSURE (LP); METAL-ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); ROOM TEMPERATURE PHOTOLUMINESCENCE (RT-PL); THREADING DISLOCATION DENSITIES (TDD); THREADING DISLOCATION DENSITY (TDD); X RAY DIFFRACTION (XRD); X RAY DIFFRACTION PEAKS;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION;

EID: 44849089279     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2939216     Document Type: Article

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