Hydride vapor phase epitaxy of InN by the formation of InCl3 using In metal and Cl2

Journal of Crystal Growth

Volumn 300, Issue 1, 2007, Pages 57-61

  Kumagai, Yoshinao ^a   Kikuchi, Jun ^a   Nishizawa, Yuuki ^a   Murakami, Hisashi ^a   Koukitu, Akinori ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

A1. Characterization; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Semiconducting indium compounds

Indexed keywords

HYDRIDE VAPOR PHASE EPITAXY (HVPE); SAPPHIRE SUBSTRATES; SOURCE ZONE TEMPERATURE; SURFACE NITRIDATION;

CATHODOLUMINESCENCE; CHLORINE COMPOUNDS; CRYSTALLINE MATERIALS; HIGH TEMPERATURE EFFECTS; NITRIDES; REACTION KINETICS; SAPPHIRE; SEMICONDUCTING INDIUM COMPOUNDS; SINGLE CRYSTALS; SPECTRUM ANALYSIS; THERMODYNAMICS;

VAPOR PHASE EPITAXY;

EID: 33847296989     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.202     Document Type: Article

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