Structural and electrical characteristics of high quality (100) orientated- Zn3 N2 thin films grown by radio-frequency magnetron sputtering

Journal of Applied Physics

Volumn 108, Issue 8, 2010, Pages

  Xing, G Z ^a,b   Wang, D D ^b   Yao, B ^a   Ah Qune, L F N ^b   Yang, T ^a   He, Q ^a   Yang, J H ^c   Yang, L L ^c  

^a JILIN UNIVERSITY   (China)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c JILIN NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BOND FORMATION; CHEMICAL BONDING STATE; CONDUCTION MECHANISM; CORE LEVELS; CRYSTAL QUALITIES; ELECTRICAL CHARACTERISTIC; FREE AMINES; HALL EFFECT MEASUREMENT; HIGH QUALITY; ION SITES; QUARTZ SUBSTRATE; RADIO-FREQUENCY-MAGNETRON SPUTTERING; RF-MAGNETRON SPUTTERING; S STATE; SUBSTRATE TEMPERATURE; TEMPERATURE DEPENDENT; TEMPERATURE RANGE;

BINDING ENERGY; CHEMICAL BONDS; HALL EFFECT; LATTICE CONSTANTS; MAGNETIC FIELD EFFECTS; MAGNETRON SPUTTERING; NITRIDES; QUARTZ; SUBSTRATES; THIN FILMS; VAPOR DEPOSITION; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

ZINC;

EID: 78149421289     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3493208     Document Type: Article

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