Crystal quality of InN thin films grown on ZnO substrate by radio-frequency molecular beam epitaxy

Journal of Electronic Materials

Volumn 34, Issue 4, 2005, Pages 424-429

  Ohuchi, Satoru ^a   Takizawa, Toshiyuki ^a  

^a Semiconductor Company   (Japan)

Author keywords

First principles calculation; InN; Molecular beam epitaxy (MBE); Polarity; ZnO

Indexed keywords

ADSORPTION; CRYSTAL GROWTH; CRYSTAL LATTICES; FILM GROWTH; GALLIUM NITRIDE; HIGH ENERGY ELECTRON DIFFRACTION; INDIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; PLASMA APPLICATIONS; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

CRYSTAL QUALITY; FIRST-PRINCIPLES CALCULATION; INN; POLARITY; ZNO;

THIN FILMS;

EID: 18144370042     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-005-0122-5     Document Type: Conference Paper

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