The effect of negative VTH of NAND flash memory cells on data retention characteristics

IEEE Electron Device Letters

Volumn 30, Issue 2, 2009, Pages 155-157

  Park, Mincheol ^a   Ahn, Eungjin ^a   Cho, Eunsuk ^a   Kim, Keonsoo ^a   Lee, Won Seong ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Control gate voltage; Data retention; NAND Flash memory; Narrow width effect

Indexed keywords

CELLS; CYTOLOGY; DATA STORAGE EQUIPMENT; NAND CIRCUITS; SEMICONDUCTING SILICON; SPEECH ANALYSIS; TRANSISTORS; TUNNELS;

CELL TRANSISTORS; COMBINED EFFECTS; CONTROL GATE VOLTAGE; DATA RETENTION; FOWLER-NORDHEIM STRESS; NAND FLASH MEMORIES; NAND FLASH MEMORY; NARROW-WIDTH EFFECT; ON CURRENTS; SHALLOW-TRENCH ISOLATIONS; SHORT DISTANCES; TUNNEL OXIDE]; TUNNELING CURRENTS;

FLASH MEMORY;

EID: 59649119519     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2009006     Document Type: Article

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