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Volumn 312, Issue 16-17, 2010, Pages 2459-2464
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Comparison of charge generation from hot wires between AC and DC power supply and its effect on deposition behavior during hot-wire chemical vapor deposition of silicon
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Author keywords
A1. Nanostructure; A3. Chemical vapor deposition processes; A3. Polycrystalline film; B2. Semiconducting silicon
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Indexed keywords
A3. POLYCRYSTALLINE FILM;
AC POWER;
B2. SEMICONDUCTING SILICON;
CHARGE GENERATION;
CHEMICAL VAPOR DEPOSITION PROCESS;
CRYSTALLINE FRACTIONS;
CRYSTALLINITIES;
DC BIAS;
DC POWER;
DC POWER SUPPLIES;
DEPOSITION BEHAVIOR;
HOT WIRE CHEMICAL VAPOR DEPOSITION;
HOT WIRES;
MEASURED CURRENTS;
NEGATIVE CURRENTS;
POLYCRYSTALLINE FILM;
POWER SUPPLY;
PROCESSING CONDITION;
REACTANT GAS;
REACTOR PRESSURES;
WIRE TEMPERATURE;
CHEMICAL VAPOR DEPOSITION;
CRYSTALLINE MATERIALS;
DEPOSITION;
ELECTRIC FIELD MEASUREMENT;
ELECTRIC FIELDS;
ELECTRIC GENERATORS;
ELECTRIC POWER MEASUREMENT;
ELECTRIC POWER SYSTEMS;
NANOSTRUCTURES;
SEMICONDUCTING SILICON;
SEMICONDUCTING SILICON COMPOUNDS;
THIN FILMS;
WIRE;
DC POWER TRANSMISSION;
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EID: 77955278088
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.05.023 Document Type: Article |
Times cited : (7)
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References (38)
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