Deposition behavior of Si on insulating and conducting substrates in the CVD process: Approach by charged cluster model

Journal of Crystal Growth

Volumn 206, Issue 3, 1999, Pages 177-186

  Hwang, Nong M ^a,b   Cheong, Woo S ^c   Yoon, Duk Y ^c  

^a Seoul National University   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

^c Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; ELECTROSTATICS; ETCHING; MATHEMATICAL MODELS; NUCLEATION; SEMICONDUCTING SILICON; SUBSTRATES; THERMODYNAMICS;

CHARGED CLUSTER MODEL;

SEMICONDUCTING FILMS;

EID: 0032597749     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00334-6     Document Type: Article

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