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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 1709-1712

High temperature characterization of Pt-based Schottky diodes on AlGaN/GaN heterostructures

(6) Pedros J a Cuerdo, R a Lossy, R b Chaturvedi, N b Wurfl J b Calle, F a

a Polytechnic University of Madrid (Spain)

b LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

I-V-T MEASUREMENTS; PT/AU CASE; SLIGHT DEGRADATION; THERMAL CYCLE; 68.60.DV; ALGAN/GAN HETEROSTRUCTURES; DIODE PARAMETERS; EFFECTIVE BARRIER HEIGHTS; IDEALITY FACTORS; INCREASING TEMPERATURES; INTERMEDIATE LAYERS; SCHOTTKY CONTACTS;

GALLIUM NITRIDE; HETEROJUNCTIONS; THERMODYNAMIC STABILITY; PLATINUM; SCHOTTKY BARRIER DIODES;

SCHOTTKY BARRIER DIODES; GALLIUM NITRIDE;

EID: 33746375348 PISSN: 18626351 EISSN: None Source Type: Journal
DOI: 10.1002/pssc.200565225 Document Type: Conference Paper

Times cited : (12)

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