Electrical overstress in AlGaN/GaN HEMTs: Study of degradation processes

Solid-State Electronics

Volumn 48, Issue 2, 2004, Pages 271-276

  Kuzmik J ^a,c   Pogany, D ^a   Gornik, E ^a   Javorka, P ^b   Kordos P ^b  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

^c INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

Author keywords

Device degradation; Electrical overstress and electrostatic discharge; GaN HEMT

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC POTENTIAL; GALLIUM NITRIDE; INTERFEROMETRY; SEMICONDUCTING ALUMINUM COMPOUNDS;

ELECTRICAL OVERSTRESS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0242303624     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00295-8     Document Type: Article

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