Relation between solubility of silicon in High-k oxides and the effect of fermi level pinning

ECS Transactions

Volumn 13, Issue 2, 2008, Pages 15-20

  Umezawa, N ^a   Shiraishi, K ^b   Kakushima, K ^c   Iwai, H ^c   Ohmori, K ^d   Yamada, K ^d   Chikyow, T ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^d WASEDA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; CHARGE NEUTRALITIES; DIELECTRIC CONSTANTS; ELECTRON TRANSFERS; GATE INSULATORS; GATE STACKS; HIGH SOLUBILITIES; METAL ELECTRODES; SI SUBSTRATES; SILICATE LAYERS;

ATOMS; BLOOD VESSEL PROSTHESES; DIELECTRIC MATERIALS; ELECTRIC CURRENTS; ELECTROLYSIS; FERMI LEVEL; FERMIONS; GROWTH (MATERIALS); HAFNIUM COMPOUNDS; LANTHANUM; MATERIALS; MATERIALS SCIENCE; METALS; NANOSYSTEMS; RELIABILITY; SEMICONDUCTING SILICON COMPOUNDS; SILICATES; SILICON; SILICON COMPOUNDS; SOLUBILITY; TERNARY SYSTEMS;

FIELD EFFECT TRANSISTORS;

EID: 55849132194     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2908611     Document Type: Conference Paper

References (16)

1. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001).
2. J. Robertson, Rep. Prog, Phys. 69, 327 (2006).
3. J. Robertson, J. Vac. Sci. Technol. B 18, 1785 (2000).
4. C. C. Hobbs, L. R. C. Fonseca, A. Knizhnik, V. Dhandapani, S. B. Samavedam, W. J. Taylor, J. M. Grant, L. G. Dip, D. H. Triyoso, R. I. Hegde, D. C. Gilmer, R. Garcia, D. Roan, M. L. Lovejoy, R. S. Rai, E. A. Hebert, H-H. Tseng, S. G. H. Anderson, B. E. White, and P. J. Tobin, IEEE Transactions on Electron Devices 51, 978 (2004).
5. K. Shiraishi, K. Yamada, K. Torii, Y. Akasaka, K. Nakajima, M. Konno, T. Chikyow, H. Kitajima, and T. Arikado, Jan. J. Appl. Phys. 43, L1413 (2004).
6. H. Takeuchi, D. Ha, and T-J. King, J. Vac. Sci. Technol A, 22, 1337 (2004).
7. A. Oshiyama, Jpn. J. Appl. Phys. 37, L232 (1998) and references therein.
8. J. K. Schaeffer, L. R. C. Fonseca, S. B. Samavedam, Y. Liang, P. J. Tobin, and B. E. White, Appl. Phys. Lett. 85, 1826 (2004).
9. E. Carrier et al., Tech. Digest VLSI Tech. p. 230 (2005).
10. K. Ohmori, P. Ahmet, M. Yoshitake, T. Chikyow, K. Shiraishi, K. Yamabe, H. Watanabe, Y. Akasaka, Y. Nara, K.-S. Chang, M. L. Green, K. Yamada, J. Appl. Phys. 101, 084118 (2007).
11. Y. Akasaka, G. Nakamura, K. Shiraishi, N. Umezawa, K. Yamabe, O. Ogawa, M. Lee, T. Amiaka, T. Kasuya, H. Watanabe, T. Chikyow, F. Ootsuka, Y. Nara, K. Nakamura, Jan. J. Appl. Phys. 45, L1289 (2006).
12. Y. Yamamoto, K. Kita, K. Kyuno, and A. Toriumi, Appl. Phys. Lett. 89, 032903 (2006).
13. K. Ohmori, P. Ahmet, K. Shiraishi, K. Yamabe, H. Watanabe, Y. Akasaka, N. Umezawa, K. Nakajima, M. Yoshitake, T. Nakayama, K.-S. Chang, K. Kakushima, Y. Nara, M. L. Green, H. Iwai, K. Yamada, T. Chikyow, ECS Trans. 3(3), 351 (2006).
14. A. I. Kingon, J.-P. Maria, D. Wicaksana, and C. Hoffman, Tech. Digest of International Workshop on Gate Insulator, Tokyo, p. 36 (2001).
15. M. Copel, E. Cartier, and F. M. Ross, Appl. Phys. Lett. 78, 1607 (2001).
16. D. H. Triyoso et al., J. Vac Sci. Technol. B 22, 2121 (2004).