Work function tunability of refractory metal nitrides by lanthanum or aluminum doping for advanced CMOS devices

IEEE Transactions on Electron Devices

Volumn 54, Issue 11, 2007, Pages 2871-2877

  Wang, Xin Peng ^a,b   Lim, Andy Eu Jin ^a,b   Yu, Hong Yu ^c   Li, Ming Fu ^a,d   Ren, Chi ^a,b   Loh, Wei Yip ^b   Zhu, Chun Xiang ^a   Chin, Albert ^a,e   Trigg, Alastair David ^b   Yeo, Yee Chia ^a,f   Biesemans, Serge ^c   Lo, Guo Qiang ^b   Kwong, Dim Lee ^a,b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c IMEC   (Belgium)

^d FUDAN UNIVERSITY   (China)

^e NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^f AGENCY FOR SCIENCE   (Singapore)

Author keywords

(HfxLa1 x) Ny; (TaxAl1 x)Ny; High k gate dielectric; Metal gate; MOSFET; Work function tuning

Indexed keywords

ANNEALING; CMOS INTEGRATED CIRCUITS; GATE DIELECTRICS; GATES (TRANSISTOR); NITRIDES; REFRACTORY METAL COMPOUNDS;

HIGH-K GATE DIELECTRIC; METAL GATE; REFRACTORY METAL NITRIDE; WORK FUNCTION TUNING;

MOSFET DEVICES;

EID: 36249006521     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.907130     Document Type: Article

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